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PolarHV TM HiPerFET IXFR 64N50P
Power MOSFET
ISOPLUS247 TM
(Electrically Isolated Back Surface)
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
V DSS
I D25
R DS(on)
t rr
= 500 V
= 35 A
≤ 95 m ?
≤ 200 ns
Symbol
Test Conditions
Maximum Ratings
ISOPLUS247 (IXFR)
V DSS
V DGR
V GSS
T J = 25 ° C to 150 ° C
T J = 25 ° C to 150 ° C; R GS = 1 M ?
Continuous
500
500
± 30
V
V
V
E153432
V GSM
I D25
Transient
T C = 25 ° C
± 40
35
V
A
G
D
S
(Isolated Tab)
I DM
I AR
E AR
E AS
T C = 25 ° C, pulse width limited by T JM
T C = 25 ° C
T C = 25 ° C
T C = 25 ° C
150
43
80
2.5
A
A
mJ
J
G = Gate
S = Source
D = Drain
Silicon chip on Direct-Copper-Bond
Low drain to tab capacitance(<30pF)
Low R DS (on) HDMOS TM process
dv/dt
P D
T J
T JM
T stg
I S ≤ I DM , di/dt ≤ 100 A/ μ s, V DD ≤ V DSS ,
T J ≤ 150 ° C, R G = 4 ?
T C = 25 ° C
20
300
-55 ... +150
150
-55 ... +150
V/ns
W
° C
° C
° C
Features
l
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
l
l
T L
V ISOL
F d
1.6 mm (0.062 in.) from case for 10 s
50/60 Hz, RMS, 1 minute
Mounting force
300
2500
20..120 / 4.5..26
° C
V~
N/lb
l
l
l
Rugged polysilicon gate cell structure
Rated for Unclamped Inductive Load
Switching (UIS)
Fast intrinsic Rectifier
Weight
5
g
Applications
l
DC-DC converters
Symbol Test Conditions
(T J = 25 ° C, unless otherwise specified)
Characteristic Values
Min. Typ. Max.
l
l
Battery chargers
Switched-mode and resonant-mode
BV DSS
V GS(th)
V GS = 0 V, I D = 250 μ A
V DS = V GS , I D = 8 mA
500
3.0
5.5
V
V
l
l
power supplies
DC choppers
AC motor control
I GSS
V GS = ± 30 V DC , V DS = 0
± 200
nA
Advantages
I DSS
R DS(on)
V DS = V DSS
V GS = 0 V
V GS = 10 V, I D = 32 A , Note 1
T J = 125 ° C
25
1000
95
μ A
μ A
m ?
l
l
l
Easy assembly
Space savings
High power density
? 2006 IXYS All rights reserved
DS99412E(03/06)
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